METHOD FOR MANUFACTURING N-TYPE SEMICONDUCTOR DIAMOND AND N-TYPE SEMICONDUCTOR DIAMOND

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a low resistance n-type semiconductor diamond containing lithium and nitrogen and the n-type semiconductor diamond.;SOLUTION: The method for manufacturing the n-type semiconductor diamond comprises preparing a diamond containing Li and N by ion-implanting Li to a diamond single crystal containing N in an amount of ≥10 ppm so that the concentration of Li becomes ≥10 ppm or by ion-implanting Li and N to a diamond single crystal so that the depths of ion-implanting, where the concentrations of Li and N are each ≥10 ppm after ion-implanting, overlap when Li and N are ion-implanted to the diamond, and performing electrical activation of Li and N and recovering the crystal structure of the diamond by heat-treating the diamond within a temperature range of ≥800 and 1,800°C. The n-type semiconductor diamond contains Li and N in an amount of ≥10 ppm, respectively, at the same depth from the crystal surface and has a sheet resistance of ≤10⁷Ω/square.;COPYRIGHT: (C)2005,JPO&NCIPI