METHOD OF MANUFACTURING N-TYPE SEMICONDUCTOR DIAMOND, AND N-TYPE SEMICONDUCTOR DIAMOND

摘要

A method of manufacturing n-type semiconductor diamond by thepresent invention is characterized in producing diamond incorporating Li andN by implanting Li ions into, so that 10 ppm thereof will be contained in,single-crystal diamond incorporating 10 ppm or more N, or else, in dopingsingle-crystal diamond with Li and N ions, by implanting the ions so thation-implantation depths at which the post-implantation Li and Nconcentrations each are 10 ppm or more will overlap, and thereafter annealingthe diamond in a temperature range of from 800°C or more to less than1800°Cto electrically activate the Li and N and restore the diamond crystallinestructure. In the present invention, n-type semiconductor diamondincorporates,from the surface of the crystal to the same depth, 10 ppm or more of each ofLiand N, wherein its sheet resistance is 10 7 .OMEGA./~ or less.