SiCOH DIELECTRIC FILM OF LOW DIELECTRIC CONSTANT AND ULTRALOW DIELECTRIC CONSTANT, AND FORMING METHOD THEREOF

摘要

PPROBLEM TO BE SOLVED: To provide a dielectric material which includes Si, C, O and H atoms and has specific mechanical characteristic (tensile stress, degree of elasticity, hardness, cohesive strength, crack velocity in water) values giving stable ultralow k film which is not deteriorated by steam or integration processing. PSOLUTION: This dielectrics materials has an about 2.8 dielectric constant, tensile stress of less than 45 Mpas, degree of elasticity of about 2 to about 15 GPas, and hardness of about 0.2 to about 2 GPas. An electronic device structure including the dielectric materials by this invention and various methods by which the dielectrics materials of this invention are manufactured are also disclosed. PCOPYRIGHT: (C)2005,JPO&NCIPI