SICOH DIELECTRIC FILM OF LOW DIELECTRIC CONSTANT AND ULTRALOW DIELECTRIC CONSTANT, AND MANUFACTURING METHOD THEREOF

摘要

PPROBLEM TO BE SOLVED: To provide a dielectric material containing elements of Si, C, O and H, having specific mechanical property values (tensile stress, elastic modulus, hardness, cohesive force, and crack speed in water) which provide stable ultralow-k film without deterioration arising from steam or integration processing. PSOLUTION: The dielectric materials 34, 38 and 44 have dielectric constants of approximately 2.8 or less, tensile stress of less than 45 Mpa, elastic modulus of somewhere between 2 and 15 GPa, hardness between around 0.2 to 2 GPa. Additionally, an electronic device structure containing the dielectric materials and various methods for producing them are disclosed. PCOPYRIGHT: (C)2009,JPO&INPIT