METHOD FOR FORMING POLYCRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To form a uniform polycrystalline semiconductor thin film through laser annealing.;SOLUTION: A substrate 5 having an insulating layer whose thermal conductivity is comparatively low, and whose thickness is 20nm or larger, is prepared. Next, an amorphous silicon thin film 6 whose thermal conductivity is comparatively high and whose thickness is 35nm or smaller, is formed on the insulating layer. After this, the amorphous silicon thin film 6 is shot-irradiated successively with a laser beam 2 which is moved and scanned, to be applied with thermal energy, and it is converted into the polycrystalline silicon thin film, so that the laser beam of previous shots and the laser beam of the following shots partially overlap in a section with each other. The polycrystalline silicon can grow in a uniform particle size, by setting the thickness of the amorphous silicon thin film 6 to 35nm or smaller.;COPYRIGHT: (C)2005,JPO&NCIPI