Structure of multi-tier wire bonding for high frequency integrated circuits and method of layout for the same

摘要

The present invention is to provide a structure of multi-tier wire bonding for high frequency integrated circuits. The structure comprises a first electronic device, a second electronic device and a plurality of metal wires. The first electronic device has a first bonding surface, a first carrying surface and a first grouping of bonding pads. The first grouping of bonding pads is distributed surrounding the border of the first bonding surface, and the first grouping of bonding pads at least can be divided into the first row and the second row bonding pads. The second electronic device has the second carrying surface and a plurality of second grouping of bonding pads. The second carrying surface is abutted against the first carrying surface for carrying the first electronic device, such that the first electronic device and the second electronic device overlap one another. Moreover, the method comprises: using reverse bonding to bond a metal wire starting from one bonding pad of the second grouping of bonding pads and ending at one bonding pad of the first row bonding pads; moreover, using normal bonding to bond a metal wire starting from one bonding pad of the first grouping of bonding pads and ending at one bonding pad of the second grouping of bonding pads.