首页>
外国专利>
High temperature hydrogen annealing of a gate insulator layer to increase etching selectivity between conductive gate structure and gate insulator layer
High temperature hydrogen annealing of a gate insulator layer to increase etching selectivity between conductive gate structure and gate insulator layer
展开▼
机译:栅极绝缘层的高温氢退火,以增加导电栅极结构和栅极绝缘层之间的蚀刻选择性
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method of defining a conductive gate structure for a MOSFET device wherein the etch rate selectivity of the conductive gate material to an underlying insulator layer is optimized, has been developed. After formation of a nitrided silicon dioxide layer, to be used as for the MOSFET gate insulator layer, a high temperature hydrogen anneal procedure is performed. The high temperature anneal procedure replaces nitrogen components in a top portion of the nitrided silicon dioxide gate insulator layer with hydrogen components. The etch rate of the hydrogen annealed layer in specific dry etch ambients is now decreased when compared to the non-hydrogen annealed nitrided silicon dioxide counterpart. Thus the etch rate selectivity of conductive gate material to underlying gate insulator material is increased when employing the slower etching hydrogen annealed nitrided silicon dioxide layer.
展开▼