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Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers
Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers
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机译:生产高掺杂半导体晶片的方法和无位错高掺杂半导体晶片
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摘要
The invention relates to a process for producing highly doped semiconductor wafers, in which at least two dopants which are electrically active and belong to the same group of the periodic system of the elements are used for the doping. The invention also relates to a semiconductor wafer which is free of dislocations and is doped with at least two electrically active dopants which belong to the same group of the periodic system of the elements.
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