首页>
外国专利>
PROCESS FOR PRODUCING HIGHLY DOPED SEMICONDUCTOR WAFERS, AND DISLOCATION-FREE, HIGHLY DOPED SEMICONDUCTOR WAFERS
PROCESS FOR PRODUCING HIGHLY DOPED SEMICONDUCTOR WAFERS, AND DISLOCATION-FREE, HIGHLY DOPED SEMICONDUCTOR WAFERS
展开▼
机译:生产高掺杂半导体晶片和无错位高掺杂半导体晶片的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention relates to a method for manufacturing a semiconductor wafer highly doped , electrically in the method of the present invention at least two active dopant is an element belonging to the cognate of the periodic table is used for doping . The invention also relates to a semiconductor wafer doped with at least two dopants it is not displaced , the dopant is electrically active and belongs to the homologous element of the periodic table of . ; semiconductor wafers , non- displaced , the dopant , resistivity , diffusion coefficient , the epitaxial layer
展开▼