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Atomic layer deposition of metal oxynitride layers as gate dielectrics
Atomic layer deposition of metal oxynitride layers as gate dielectrics
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机译:金属氮氧化物层的原子层沉积作为栅极电介质
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摘要
A metal oxynitride layer formed by atomic layer deposition of a plurality of reacted monolayers, the monolayers comprising at least one each of a metal, an oxide and a nitride. The metal oxynitride layer is formed from zirconium oxynitride, hafnium oxynitride, tantalum oxynitride, or mixtures thereof. The metal oxynitride layer is used in gate dielectrics as a replacement material for silicon dioxide. A semiconductor device structure having a gate dielectric formed from a metal oxynitride layer is also disclosed.
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