METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND ATOMIC LAYER DEPOSITION OF METAL OXYNITRIDE AND METAL SILICON OXYNITRIDE

摘要

The present invention relates to an improved high-k gate stack structures and the capacitor dielectric for use in preparing a 100. According to the invention, the metal alkyl amide is used in the MOCVD process or ADL is used in the metal oxynitride, or metal silicon oxynitride dielectric film 120. Metal oxynitride, or metal silicon oxynitride film may be disposed between the silicon substrate 110 and the doped polycrystalline silicon (poly-Si) or a metal electrode layer (130).