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Process for making a gate for a short channel CMOS transistor structure
Process for making a gate for a short channel CMOS transistor structure
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机译:制造用于短沟道CMOS晶体管结构的栅极的工艺
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摘要
The invention relates to a process for making a gate for a CMOS transistor structure, made from a stack realized on a face in a semi-conducting material of a substrate, said stack comprising a gate isolation layer, a gate material layer and a gate mask in sequence, the process comprising the following steps:;a) anisotropic etching of the top part of the gate material layer not masked by the gate mask, this etching step leaving the bottom part of the gate material layer and leading to the formation of a deposit composed of etching products on the etching sides resulting from the anisotropic etching,;b) treatment of the deposit composed of etching products, to make a protection layer reinforced against subsequent etching of the gate material,;c) etching of the bottom part of the gate material layer as far as the gate isolation layer, this etching comprising isotropic etching of the gate material layer to make the gate shorter at the bottom than at the top.
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