CMOS CMOS IMAGE SENSOR WITH PHOTOGATE STRUCTURE AND SENSING TRANSISTOR METHOD THEREOF AND IAMGE PROCESSING SYSTEM INCLUDING THE SAME

摘要

The CMOS image sensor includes a pixel array including a plurality of pixels, each of the plurality of pixels comprising a photogate structure controlled based on a first gate voltage, a charge pocket region formed in the substrate region, and a second gate And a sensing transistor controlled based on voltage, wherein the photogate structure integrates charges generated in response to light incident on the substrate region based on the first gate voltage, and the sensing transistor comprises the first Adjust at least one of a threshold voltage of the sense transistor and a current flowing through the sense transistor in response to the charges transferred from the photogate structure to the charge pocket region based on a difference between a gate voltage and the second gate voltage. do.