STRUCTURE OF CMOS TRANSISTOR FOR PREVENTING SHORT CHANNEL EFFECT BY ADJUSTING LENGTH OF CHANNEL AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A structure of a CMOS transistor and a fabricating method thereof are provided to prevent a short channel effect by adjusting a length of a channel according to a depth of a trench. CONSTITUTION: First and second conductive wells(114,116) are formed within a semiconductor substrate having a trench etched from a surface thereof. A well division layer(112a) is formed under a trench bottom between the first and the second conductive wells. A second conductive junction layer is formed vertically to the trench bottom and a surface of the first conductive well. A first conductive junction layer is formed vertically to the trench bottom and a surface of the second conductive well. A gate electrode(124) is formed by burying an insulating layer into the trench of the first and the second conductive wells.