ERSO short-channel IGFET model for CMOS LDD devices from long to deep-submicron channel lengths

摘要

ESIM is developed based upon physical-oriented model for deep submicron LDD CMOS technology. The effects of bias-dependent series resistance and nonuniform channel profile and the geometry dependence of MOSFET are well specifically built into ESIM equation. The 1-st derivatives of ESIM I-V curves are always continuous for all bias regions. Therefore, ESIM can be applied to sub- mu m mixed-mode circuit simulation.