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Method for reducing the resistivity of p-type II-VI and III-V semiconductors
Method for reducing the resistivity of p-type II-VI and III-V semiconductors
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机译:降低p型II-VI和III-V半导体的电阻率的方法
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摘要
The resistivity of a p-doped III-V or a p-doped II-VI semiconductor material is reduced. The reduction of resistivity of the p-type III-V or a II-VI semiconductor material is achieved by applying an electric field to the semiconductor material. III-V nitride-based light emitting diodes are prepared.
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