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Method of forming a rough (high surface area) electrode from Ti and TiN capacitors and semiconductor devices including same
Method of forming a rough (high surface area) electrode from Ti and TiN capacitors and semiconductor devices including same
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机译:由Ti和TiN电容器形成粗糙(高表面积)电极的方法以及包括该电极的半导体器件
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摘要
A technique for forming a high surface area electrode or storage node for a capacitor and devices formed thereby, including depositing a first layer of conductive material on a substrate, such that a discontinuous layer is formed. A second conductive material layer is deposited over the discontinuous first conductive material layer, such that the second conductive material layer grows or accumulates on the discontinuous first conductive material layer at a faster rate than on the exposed areas of the substrate in the discontinuous first conductive material layer to form a rough conductive material layer.
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