High-voltage semiconductor device

摘要

A high-voltage semiconductor device includes: a drain region (6); a metal electrode (15) electrically connected to the drain region; and electrically floating plate electrodes (11a,12a) formed on a field insulating film (8) over a semiconductor region (2). Parts of the metal electrodes (15-1,15-2) are extended onto the interlevel dielectric film and located over the respective plate electrodes. Each part of the metal electrode is capacitively coupled to associated one of the plate electrodes.