A critical evaluation of the performance capabilities of various wide-bandgap compound semiconductors for superior high-power and high-frequency unipolar electronic devices is presented. A wide range of semiconductors, including the III-V and II-VI compounds, various semiconducting oxides, and some pseudobinary intermetallic compounds, have been analyzed. In order to cover all possible features of power device performance, seven different figures of merit are evaluated for the various semiconductors. Besides diamond and SiC, it is found that AlN, GaN, ZnO, and the intermetallic compounds Ga/sub x/In/sub 1-x/N, Al/sub x/In/sub 1-x/N, Al/sub x/Ga/sub 1-x/N, and (AlN)/sub x/(SiC)/sub 1-x/ offer significantly improved unipolar power device performance over Si.
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机译：提出了对优质大功率和高频单极电子设备的各种宽带隙化合物半导体的性能能力的关键评价。已经分析了各种半导体，包括III-V和II-VI化合物，各种半导体氧化物和一些假血管间化合物。为了涵盖功率器件性能的所有可能特征，对各种半导体评估七种不同的优点图。除了钻石和SiC之外，还发现Aln，GaN，ZnO和金属间化合物Ga / sub X / In / sub 1-x / n，Al / sub x / In / sub 1-x / n，Al / sub X / Ga / sub 1-x / n，（ALN）/ sub X /（SIC）/ SUB 1-X /提供显着提高了SI的单极性电源装置性能。
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