NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE INCLUDING MOS TRANSISTOR HAVING FLOATING GATE AND CONTROL GATE TO SIMPLIFY SEMICONDUCTOR FABRICATION PROCESS

摘要

PURPOSE: A non-volatile semiconductor memory device including a MOS transistor having a floating gate and a control gate to simplify a semiconductor fabrication process is provided to simplify the fabrication process of the non-volatile semiconductor memory device by simplifying a reliability inspection for a memory cell and a reliability inspection for a capacitor within a boosting circuit. CONSTITUTION: A memory cell includes the first MOS transistor having a charge accumulation layer and a control gate formed on the charge accumulation layer having an inter-gate insulating layer. A boosting circuit(17,18) is used for generating a voltage supplied to the memory cell. The boosting circuit includes a capacitor element. The capacitor element includes first and second semiconductor layers, a capacitor insulating layer, and the third semiconductor layer. The first and second semiconductor layers are formed on a semiconductor substrate. The capacitor insulating layer is formed on a top part and a lateral part of each of the first and second semiconductor layers and on the semiconductor substrate between the first and second semiconductor layers. The capacitor insulating layer is formed with the same material as the inter-gate insulating layer. The third semiconductor layer is formed on the capacitor insulating layer, is connected electrically to the first semiconductor layer, and is isolated electrically from the second semiconductor layer.