首页> 外国专利> SEMICONDUCTOR SUBSTRATE INCLUDING SEMICONDUCTOR LAYER, POROUS LAYER FOR SUPPORTING SEMICONDUCTOR LAYER, AND STRAIN INDUCING REGION FOR STRAINING SEMICONDUCTOR LAYER BY APPLYING STRESS TO SEMICONDUCTOR LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR SUBSTRATE INCLUDING SEMICONDUCTOR LAYER, POROUS LAYER FOR SUPPORTING SEMICONDUCTOR LAYER, AND STRAIN INDUCING REGION FOR STRAINING SEMICONDUCTOR LAYER BY APPLYING STRESS TO SEMICONDUCTOR LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

机译:通过将应力应用于半导体层,半导体器件,方法和方法,包括半导体层,包括半导体层,用于支撑半导体层的多孔层以及用于对半导体层进行应变的应变诱导区域的半导体基质。

摘要

PURPOSE: A semiconductor substrate, a semiconductor device, and a method of manufacturing the same are provided to strain efficiently a semiconductor layer or a semiconductor region by using a strain inducing region. CONSTITUTION: A porous layer(12) is used for supporting a semiconductor layer(13). A strain inducing region(14) is used for straining the semiconductor layer by applying stress to the semiconductor layer. The porous layer and the semiconductor layer include a plurality of island-shaped regions. The strain inducing region is formed between the island-shaped regions. The semiconductor layer includes a plurality of island-shaped semiconductor regions. The strain inducing region is formed between the island-shaped semiconductor regions.
机译:目的:提供一种半导体衬底,半导体器件及其制造方法,以通过使用应变诱导区域有效地使半导体层或半导体区域应变。组成:多孔层(12)用于支撑半导体层(13)。应变诱导区域(14)用于通过向半导体层施加应力来使半导体层应变。多孔层和半导体层包括多个岛状区域。在岛状区域之间形成应变诱发区域。半导体层包括多个岛状半导体区域。在岛状半导体区域之间形成应变诱发区域。

著录项

  • 公开/公告号KR20040105627A

    专利类型

  • 公开/公告日2004-12-16

    原文格式PDF

  • 申请/专利权人 CANON KABUSHIKI KAISHA;

    申请/专利号KR20040042219

  • 发明设计人 SAKAGUCHI KIYOFUMI;SATO NOBUHIKO;

    申请日2004-06-09

  • 分类号H01L27/12;

  • 国家 KR

  • 入库时间 2022-08-21 22:06:21

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