A method for fabricating a storage capacitor and a semiconductor component fabricated by using a storage capacitor based on the same method

摘要

Production of a storage capacitor comprises preparing a first electrode layer (1); applying a 1 nm thick CeO2 layer (2) on the electrode layer; applying an amorphous dielectric layer (3) made from SrBi2Ta2O9 (SBT) or SrBi2(TaNb)2O9 (SBTN) on the CeO2 layer; heating at 590-620[deg] C to crystallize the dielectric layer; and applying a second electrode layer (4) on the dielectric layer. An independent claim is also included for a process for the production of a semiconductor component comprising forming a switching transistor on a semiconductor substrate; and forming the storage capacitor on the transistor. Preferred Features: The electrode layers are made from platinum, a conducting oxide of a platinum or an inert and conducting oxide. The dielectric layer is 20-200 nm thick.