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Method of fabricating semiconductor device having storage capacitor and higher voltage resistance capacitor and semiconductor device fabricated using the same
Method of fabricating semiconductor device having storage capacitor and higher voltage resistance capacitor and semiconductor device fabricated using the same
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机译:具有存储电容器和更高耐压电容器的半导体器件的制造方法以及使用其制造的半导体器件
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摘要
Provided are a method of fabricating a semiconductor device having different kinds of capacitors, and a semiconductor device formed using the same. In a fabrication process, after preparing a substrate including a storage capacitor region and a higher voltage resistance capacitor region, a lower electrode layer may be formed on the storage capacitor region and the higher voltage resistance capacitor region. A first dielectric film may be formed on the lower electrode layer, and the first dielectric film of the storage capacitor region may be selectively removed to expose the lower electrode layer of the storage capacitor region. After forming a second dielectric film on the first dielectric film and the exposed lower electrode layer of the storage capacitor region, an upper electrode layer may be formed on the second dielectric film.
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