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High energy/capacitance density poly(vinylidene fluoride) based polymers for energy storage capacitor applications.

机译:高能量/电容密度的聚偏氟乙烯聚合物,用于储能电容器应用。

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摘要

The increased energy levels and continued demands for miniaturization of many devices such as hybrid electric vehicles, pulsed power systems, and switched-mode power supplies call for advanced polymer film capacitors with a high energy density (HED) [1], which cannot be met in current low dielectric constant (3.2) polymers (energy density ∼2 J/cm3) [2]. Poly(vinylidenefluoride) (PVDF) features a high dielectric constant (12) [3], and has the potential to reach a high energy density. This dissertation introduces general considerations leading to and the results of ultra-high energy density (>25 J/cm3) in PVDF-based copolymers P(VDF-HFP) (HFP: hexafluoropropylene) 95.5/4.5 mol% and P(VDF-CTFE) (CTFE: chlorotrifluoroethylene) 91/9 mol% [4], [5], which represents an order of magnitude improvement of the energy density over currently used polymers.;In addition, this dissertation is devoted to developing a fundamental understanding of several newly observed phenomena in these HED polymers, which are not present in the currently low dielectric constant polymers. In polymer film capacitors, high fields have been used to realize high energy density. Therefore, the emphasis is paid to understand the response behaviors of these HED polymer dielectrics at high fields, particularly the losses and the breakdown mechanism. Based on these investigations and fundamental understandings, different approaches are introduced to further improve performance of these HED polymers.;This dissertation demonstrates that in these HED fluoropolymer films the losses increase rapidly with applied electric fields. Immediately beyond the weak field, the losses can be caused by the ferroelectric domain wall type motions, similar to those in magnetic materials as described by Rayleigh's law [6]. On the other hand, a complex notation has been extensively used to describe the dielectric behavior [7]. In this dissertation, we extend this complex notation to the non-linear region to include the losses [8]. As the field increases further (> 100 MV/m), the loss due to the ferroelectric switching dominates. At very high fields (> 250 MV/m), it is the conduction loss that dominates. Even for state-of-the-art capacitor films that are widely regarded as "linear" dielectrics, the conduction loss can become higher at high fields due to a non-linear increase in the conduction [9].;In PVDF-based polymers, it is well known that polymer modifications and processing conditions can significantly influence the ferroelectric loss [10]. Therefore, two approaches were investigated to reduce the ferroelectric switching loss: (1) the irradiation method [11] to destabilize the polar conformation and correspondingly reduce the ferroelectric loss and (2) the biaxial stretching method. The film processing study revealed that the orientation of polymer chains parallel to the film surface improves the breakdown strength and reduces the conduction loss in PVDF-based polymers, while a random orientation of polymer chains along the film surface is desired to reduce the ferroelectric loss.;In order to reduce the conduction loss, we take the general approach to employ a blocking layer which possesses a higher resistivity compared to the original film [12]. However, for these HED polymers, the blocking layer should also meet the requirements: (1) a dielectric constant closer to the original film (∼13) to maintain a high energy density and (2) a low temperature fabrication because of the low melting temperature (∼160°C) of PVDF-based polymers. Hence, insulating polymers of low dielectric constants (3.2) cannot meet the first requirement and will significantly reduce the energy density. On the other hand, ceramics can meet the first requirement. However, their high temperature fabrication process (>300°C) [13] is not compatible with PVDF-based polymers. In this study, we demonstrated that very high resistivity with a dielectric constant of ∼7 can be obtained with Si3N 4 deposited at 100°C and that the conduction loss of the resulting bilayered films can be much less than a single layer of PVDF-based copolymers.;In the study of the electrical breakdown in these HED capacitor films, it was observed that although the temperature dependence of the breakdown strength in the P(VDF-HFP) 95.5/4.5 mol% films is consistent with the electromechanical (EM) breakdown [14], the widely accepted EM breakdown model of Stark-Garton significantly overestimates the breakdown strength. We show that this discrepancy lies in the fact that the Stark-Garton model fails to capture the mechanical properties of the polymers that experience a plastic deformation. Furthermore, we introduce a more general power law relation to characterize the elastic-plastic deformation of polymers. This newly developed model agrees well with the experimental data [15], and should be applicable to any polymer dielectrics in their electromechanical breakdown because of the universal validity of this model to describe the mechanical behavior of polymer dielectrics.
机译:能源水平的提高以及对许多设备(如混合动力汽车,脉冲电源系统和开关模式电源)的小型化的持续需求,要求具有高能量密度(HED)的先进聚合物薄膜电容器[1],这无法满足在目前低介电常数(<3.2)的聚合物中(能量密度约为2 J / cm3)[2]。聚偏二氟乙烯(PVDF)具有高介电常数(12)[3],并具有达到高能量密度的潜力。本文介绍了导致PVDF基共聚物P(VDF-HFP)(HFP:六氟丙烯)95.5 / 4.5 mol%和P(VDF-CTFE)超高能量密度(> 25 J / cm3)的一般考虑因素和结果)(CTFE:氯三氟乙烯)91/9 mol%[4],[5],这表示相对于当前使用的聚合物,能量密度提高了一个数量级。;此外,本论文还致力于发展对几种聚合物的基本理解。这些HED聚合物中新近观察到的现象,目前低介电常数聚合物中不存在。在聚合物膜电容器中,已经使用高场来实现高能量密度。因此,重点是要了解这些HED聚合物电介质在高电场下的响应行为,尤其是损耗和击穿机理。基于这些研究和基本理解,引入了不同的方法来进一步改善这些HED聚合物的性能。本论文表明,在这些HED含氟聚合物薄膜中,损耗随施加电场的增加而迅速增加。紧随弱磁场之外,损耗可能是由铁电畴壁型运动引起的,类似于瑞利定律[6]所描述的磁性材料中的运动。另一方面,复杂的符号已被广泛用于描述介电行为[7]。在本文中,我们将此复杂符号扩展到非线性区域以包括损失[8]。随着磁场的进一步增加(> 100 MV / m),由铁电开关引起的损耗占主导地位。在非常高的场(> 250 MV / m)下,传导损耗占主导地位。即使对于被广泛认为是“线性”电介质的最先进的电容器膜,由于高非线性导电率[9],其导通损耗在高电场下也会变得更高[9]。众所周知,聚合物的改性和加工条件会显着影响铁电损耗[10]。因此,研究了两种减少铁电开关损耗的方法:(1)辐照法[11]来破坏极性构象并相应地降低铁电损耗;(2)双轴拉伸法。薄膜加工研究表明,聚合物链平行于薄膜表面的取向提高了击穿强度,并降低了基于PVDF的聚合物的传导损耗,而聚合物链沿薄膜表面的随机取向则可降低铁电损耗。 ;为了减少传导损耗,我们采用一般的方法来采用阻挡层,该阻挡层与原始膜相比具有更高的电阻率[12]。但是,对于这些HED聚合物,阻挡层也应满足以下要求:(1)接近原始薄膜的介电常数(〜13)以保持高能量密度;(2)由于熔点低,制造温度较低PVDF基聚合物的最高温度(约160°C)。因此,低介电常数(<3.2)的绝缘聚合物不能满足第一个要求,并且将大大降低能量密度。另一方面,陶瓷可以满足第一个要求。但是,它们的高温制造工艺(> 300°C)[13]与基于PVDF的聚合物不兼容。在这项研究中,我们证明了在100°C下沉积的Si3N 4可以获得非常高的电阻率,介电常数约为7,并且所形成的双层膜的传导损耗可以远小于单层基于PVDF的薄膜在这些HED电容器薄膜的电击穿研究中,我们发现尽管P(VDF-HFP)95.5 / 4.5 mol%薄膜的击穿强度与温度的相关性与机电(EM)一致击穿[14],Stark-Garton广泛接受的电磁击穿模型大大高估了击穿强度。我们表明,这种差异在于以下事实:Stark-Garton模型无法捕获经历塑性变形的聚合物的机械性能。此外,我们引入了更一般的幂定律关系来表征聚合物的弹塑性变形。这个新开发的模型与实验数据非常吻合[15],并且由于该模型可用于描述聚合物电介质的机械性能,因此该模型应适用于任何机电击穿的聚合物电介质。

著录项

  • 作者

    Zhou, Xin.;

  • 作者单位

    The Pennsylvania State University.;

  • 授予单位 The Pennsylvania State University.;
  • 学科 Engineering Electronics and Electrical.;Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 188 p.
  • 总页数 188
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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