首页> 外国专利> POLISHING HEAD OF CMP APPARATUS TO IMPROVE POLISHING UNIFORMITY OF WAFER AND PREVENT WAFER FROM BEING BROKEN

POLISHING HEAD OF CMP APPARATUS TO IMPROVE POLISHING UNIFORMITY OF WAFER AND PREVENT WAFER FROM BEING BROKEN

机译:CMP装置的抛光头可改善晶圆和均匀晶圆的打磨均匀性

摘要

PURPOSE: A polishing head of a CMP(chemical mechanical polishing) apparatus is provided to improve polishing uniformity of a wafer and prevent a wafer from being broken by arranging vacuum holes according to a wafer type. CONSTITUTION: A polishing head(200) of a CMP apparatus absorbs and pressurizes a wafer(100) by using vacuum. A plurality of vacuum holes(200a) are arranged according to a wafer type on the lower surface of the polishing head, separated from each other by a predetermined interval. The interval between the corner part of the wafer and the plurality of vacuum holes is uniformly maintained.
机译:目的:提供一种CMP(化学机械抛光)设备的抛光头,以通过根据晶片类型布置真空孔来提高晶片的抛光均匀性并防止晶片破裂。组成:CMP设备的抛光头(200)通过真空吸收并加压晶片(100)。根据晶片类型,在抛光头的下表面上布置有多个真空孔(200a),它们彼此隔开预定间隔。晶片的角部与多个真空孔之间的间隔被均匀地保持。

著录项

  • 公开/公告号KR20050001208A

    专利类型

  • 公开/公告日2005-01-06

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20030042782

  • 发明设计人 LEE JAI HONG;

    申请日2003-06-27

  • 分类号H01L21/304;

  • 国家 KR

  • 入库时间 2022-08-21 22:06:07

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