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METHOD FOR FORMING BUMP OF METAL LINE IN SEMICONDUCTOR FOR IMPROVING ELECTRICAL PROPERTIES OF SEMICONDUCTOR BY PREVENTING MISALIGNMENT OF BUMP DUE TO STEP OF PASSIVATION LAYER
METHOD FOR FORMING BUMP OF METAL LINE IN SEMICONDUCTOR FOR IMPROVING ELECTRICAL PROPERTIES OF SEMICONDUCTOR BY PREVENTING MISALIGNMENT OF BUMP DUE TO STEP OF PASSIVATION LAYER
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机译:在半导体中形成金属线凹凸的方法,通过钝化层的步骤防止凹凸不平,从而改善半导体的电性能
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摘要
PURPOSE: A method for forming a bump of a metal line in a semiconductor is provided to improve electrical properties of the semiconductor by preventing misalignment of a bump due to a step of a passivation layer. CONSTITUTION: A metal line(104) is formed on a semiconductor chip(102). A thick oxide layer(106) is formed on the entire surface of the semiconductor chip. The oxide layer is planarized. A silicon nitride layer(108) is formed on the oxide layer. A passivation layer for partially exposing an upper part of the metal line is formed thereon by removing selectively the silicon nitride layer and the oxide layer. A bump(112) is formed on the metal line by using a screen printing method.
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