The Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou, 215123, China;
The Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou, 215123, China;
The Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou, 215123, China;
The Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou, 215123, China;
The Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou, 215123, China;
The Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou, 215123, China;
The Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ, UK;
The Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ, UK;
The Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ, UK;
Passivation; Logic gates; High-k dielectric materials; Aluminum gallium nitride; Wide band gap semiconductors; Gallium nitride; HEMTs;
机译:表面处理对AI_2O_3栅极电介质GaN金属绝缘体 - 半导体器件电性能的影响
机译:具有原子层沉积(ALD)HfAlO高k电介质的AlGaN / GaN功率器件的高温器件传输性能和关态特性的改善
机译:电子束辐照对基于HfTiSiO(N)和HfTiO(N)层的高k介电叠层的金属-绝缘体-半导体电容器的电特性的影响
机译:高k钝化层对GaN金属 - 绝缘体 - 半导体器件电性能的影响
机译:原子层在氮化铟上沉积的高k电介质的电性能。
机译:Algan / GaN在没有GaN缓冲层的SIC器件上:电气和噪声特性
机译:Algan / GaN在没有GaN缓冲层的SIC器件上:电气和噪声特性
机译:mIs(金属 - 绝缘体 - 半导体)反转/累积层,异质结和量子阱中二维受限载流子的电子特性研究