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机译:表面处理对AI_2O_3栅极电介质GaN金属绝缘体 - 半导体器件电性能的影响
Xian Jiaotong Liverpool Univ Dept Elect & Elect Engn Suzhou Peoples R China|Univ Liverpool Dept Elect Engn & Elect Liverpool Merseyside England;
Xian Jiaotong Liverpool Univ Dept Elect & Elect Engn Suzhou Peoples R China|Univ Liverpool Dept Elect Engn & Elect Liverpool Merseyside England;
Xian Jiaotong Liverpool Univ Dept Elect & Elect Engn Suzhou Peoples R China|Univ Liverpool Dept Elect Engn & Elect Liverpool Merseyside England;
Natl Univ Singapore Dept Elect & Comp Engn Singapore Singapore;
Natl Univ Singapore Dept Elect & Comp Engn Singapore Singapore;
Xian Jiaotong Liverpool Univ Dept Elect & Elect Engn Suzhou Peoples R China|Univ Liverpool Dept Elect Engn & Elect Liverpool Merseyside England;
Xian Jiaotong Liverpool Univ Dept Chem Suzhou Peoples R China;
Univ Liverpool Dept Elect Engn & Elect Liverpool Merseyside England;
Univ Liverpool Dept Elect Engn & Elect Liverpool Merseyside England;
Univ Liverpool Dept Elect Engn & Elect Liverpool Merseyside England;
Univ Liverpool Dept Elect Engn & Elect Liverpool Merseyside England;
Xian Jiaotong Liverpool Univ Dept Elect & Elect Engn Suzhou Peoples R China|Univ Liverpool Dept Elect Engn & Elect Liverpool Merseyside England;
GaN; MIS-HEMTs; surface treatment;
机译:具有Al_2O_3或AlTiO栅极电介质的AlGaN / GaN金属-绝缘体-半导体器件中的绝缘体-半导体界面固定电荷
机译:使用HfO_2栅极电介质从金属-绝缘体-半导体电容器和金属-绝缘体-半导体场效应晶体管测量的金属-HfO_2-硅系统的电性能
机译:具有AIN中间层的GaN上的纳米层压HfO_2 / AI_2O_3电介质的界面和电学性质
机译:具有高介电常数栅极介电层的金属绝缘体半导体器件的电气性能
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:频率和栅极电压对Al ∕ SiO2 ∕ p-Si金属-绝缘体-半导体肖特基二极管的介电性能和电导率的影响
机译:表面处理对高性能光学器件(In)GaN欧姆接触电性能的影响
机译:喷射气相沉积(JVD)氧化硅/氮化物/氧化物薄膜(ONO)薄膜作为siC和GaN器件的栅极电介质的研究。