BURIED GATE AND METHOD FOR FORMING THE SAME IMPROVING SHORT MARGIN OR LEAKAGE MARGIN BY FORMING NONCONDUCTIVE SPACER

摘要

Purpose: a buried gate and a kind of method, be used to form it is identical be arranged to improve it is short while or when leakage, pass through and form an opaque gasket between buried gate and an effective area. Construction: semi-conductive substrate (100) is provided. One effective area by forming a bar ditch (200) definition on a semiconductor substrate. The non-conductive layers for burying ditch is formed. The inner sidewall that one gasket (300a) is formed in ditch by partly removing non-conductive layers. The device separation layer for burying ditch is formed. One negative film is by making the recessed formation of device separation layer. The conductor layer for burying negative film is formed.