SEMICONDUCTOR DEVICE AND A FORMING METHOD THEREOF CAPABLE OF IMPROVING A SHORT MARGIN BETWEEN A GATE AND A METAL WIRE CONTACT

摘要

PURPOSE: A semiconductor device and a forming method thereof are provided to prevent a short between a gate and a metal contact plug by etching a region between a dummy gate and an operation gate with a self-alignment method.;CONSTITUTION: A semiconductor substrate includes an active region(104) defined by a device isolation layer. An operation gate(106R) is formed on the upper side of the active region. A dummy gate(106D) is formed on the upper side of the device isolation layer. A metal contact hole is defined by an interlayer dielectric pattern(110a). The interlayer dielectric pattern exposes adjacent active regions while the device isolation layer is interposed.;COPYRIGHT KIPO 2012