METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE WITH A BURIED GATE CAPABLE OF IMPROVING THE GAP-FILL MARGIN OF CONDUCTIVE MATERIALS BY FORMING A T-SHAPED RECESS PATTERN

摘要

PURPOSE: A method for manufacturing a semiconductor device with a buried gate is provided to improve the uniformity of a fin and a channel length by etching a recess pattern twice.;CONSTITUTION: A device isolation layer(11) is formed on a substrate(10) through an STI(Shallow Trench Isolation). A first hard mask layer and a second hard mask layer are laminated on the substrate. A reflection preventing layer is laminated on the second hard mask layer. A spacer is formed on the sidewall of the reflection preventing layer and the first and second hard mask layers. A gate insulation layer(19) is formed on the lower side and the sidewall of the recess pattern. A buried gate(20) is formed on the gate insulation layer to fill the recess pattern with a preset depth.;COPYRIGHT KIPO 2012