METHOD OF FORMING ANTI-REFLECTIVE LAYER IN SEMICONDUCTOR MANUFACTURING PROCESS FOR FORMING UNIFORM OXIDE LAYER ON ENTIRE SURFACE OF WAFER

摘要

PURPOSE: A method of forming an anti-reflective layer in a semiconductor manufacturing process is provided to form a uniform oxide layer on the entire surface of a wafer by oxidizing an ARC SiON surface by an O3 gas. CONSTITUTION: A lower layer(100) is formed on a semiconductor substrate. A first anti-reflective coating(102) is formed on the lower layer. A second anti-reflective coating(104) is formed on the first anti-reflective layer. A surface oxide layer is uniformly formed by applying an O3 gas onto a surface of the second anti-reflective coating. Photoresist(106) is coated on the second anti-reflective coating including the surface oxide layer. A lower conductive layer pattern is formed by patterning the photoresist.