SILICON WAFER AND METHOD FOR FABRICATING THE SAME TO OBTAIN ENOUGH DENUDED ZONE USING TWO-STEPS RAPID THERMAL PROCESSING

摘要

PURPOSE: A silicon wafer and a method for fabricating the same are provided to obtain an enough denuded zone in the vicinity of surface and to obtain the uniform dispersion of bulk stacking faults in the bulk area using a rapid thermal processing of two steps. CONSTITUTION: A first denuded zone is formed from the front surface of a wafer to a predetermined depth of the wafer. A second denuded zone is formed from the rear surface of the wafer to a predetermined depth of the wafer. The bulk area formed between the first denuded zone and the second denuded zone has a fault density profile having the uniform dispersion from the front surface to the rear surface of the wafer.