/ Method of fabricating silicon wafers including argon/ammonia rapid thermal annealing process silicon wafers fabricated thereby and and czochralski pullers for manufacturing monocrystalline silicon ingots

摘要

PURPOSE: A fabricating method of a silicon wafer including a rapid thermal annealing process of argon/ammonia, a silicon wafer fabricated thereby, and Czochralski puller for fabricating a single crystalline silicon ingot are provided to form the silicon wafer having enough denuded zones and a controlled vertical distribution of oxygen extraction materials as an intrinsic gathering site. CONSTITUTION: A silicon wafer has an upper surface, a lower surface, and an oxygen extraction material density profile between the upper surface and the lower surface. The oxygen extraction material density profile includes the first and the second peak having the first and the second depth from the upper surface and the lower surface of the wafer, a denuded zone among the upper surface, the first peak, the lower surface, and the second peak, a concave region between the first and the second peak, a denuded zone between the lower surface including one or more slip potential regions and the second peak, and a denuded zone between the upper surface without slip potential and the first peak.