首页>外文会议>其他>Internationalonference on Gettering and Defect Engineering in Semiconductor Technology

Internationalonference on Gettering and Defect Engineering in Semiconductor Technology

召开年：
召开地：
出版时间：-

会议文集：-

会议论文

热门论文

全部论文

全选（0）

1.Production and annealing of defects in proton-irradiated n-Ge

机译：质子辐照的N-GE中的缺陷生产和退火
- 作者：V. V. Emtsev;G. A. Oganesyan;N. V. Abrosimov;V. V. Kozlovski
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Germanium;
- Proton irradiation;
- Radiation defects;
2.Interactions of self-interstitials with interstitial carbon-interstitial oxygen center in irradiated silicon: an infrared absorption study

机译：辐照硅间质碳 - 间质氧气中心的自血栓间质的相互作用：红外吸收研究
- 作者：L. I. Murin;B. G. Svensson;V. P. Markevich;A. R. Peaker
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Silicon;
- Defects;
- I_nC_iO_i complexes;
- IR absorption;
- Vibrational modes;
3.Characterization of residual strain in Si ingots grown by the seed-cast method

机译：种子铸造法生长的Si锭残余菌株的表征
- 作者：Karolin Jiptner;Masayuki Fukuzawa;Yoshiji Miyamura;Hirofumi Harada;Koichi Kakimoto;Takashi Sekiguchi
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Directional solidification;
- Silicon;
- Residual strain;
- Cooling;
- Dislocations;
4.Inline PL Inspection and Advanced Offline Evaluation of Passivation Defects, Charge and Interfaces

机译：内联PL检查和先进的离线性钝化缺陷，充电和接口的评估
- 作者：Andrew Findlay;Jacek Lagowski;Marshall Wilson;John DAmico Alexandre Savtchouk;Ferenc Korsos;Gyorgy Nadudvari
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Photoluminescence imaging;
- Passivation defects;
- Corona charge;
- Quasi steady state;
- Microwave;
- Photoconductance decay;
5.Positron Probing Of Vacancy Volume Of Thermally Stable Deep Donors Produced With 15 MeV Protons In n-FZ-Si: P Crystals

机译：在N-FZ-Si中使用15meV质子产生的热稳定深供体的空位量的正电子探测：P晶体
- 作者：N. Yu Arutyunov;M. Elsayed;R. Krause-Rehberg;C. Kessler;V. V. Emtsev;G. A. Oganesyan;V. V. Kozlovski
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Vacancies;
- Complexes;
- Radiation defects;
- Silicon;
- Positron;
- Annihilation radiation;
6.Transition metal precipitates in mc Si: a new detection method using 3D-FIB

机译：过渡金属在MC SI中沉淀：使用3D-FIB的新检测方法
- 作者：Annika Zuschlag;Michail Schwab;Dorit Merhof;Giso Hahn
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Crystalline;
- Silicon;
- Solar cells;
- Transition metals;
- Precipitates;
7.Direct Observation of Carrier Trapping Processes on Fe impurities in mc-Si Solar Cells

机译：MC-Si太阳能电池中Fe杂质载体捕获过程的直接观察
- 作者：Yutaka Yoshida;Yoshinori Tsukamoto;Masahiro Ichino;Kiyotaka Tanaka
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Iron impurities;
- Multi crystalline Si;
- Mossbauer Spectroscopy;
- Carrier trapping cross section;
8.Unstable luminescence and 'memory effect' in nitrides irradiated by electron beam

机译：电子束照射的氮化物中的不稳定发光和“记忆效应”
- 作者：Ya. V. Kuznetsova;M. V. Zamoryanskaya
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Cathodoluminescence;
- Nitrides;
- Memory effect;
- Electron beam irradiation;
9.First principle study of the diffusion of oxygen and oxygen complexes in Si, Si solid solutions and Si nanocrystals

机译：Si，Si 固溶体和Si纳米晶体中氧气和氧气复合物扩散的第一原理研究
- 作者：Vasilii Gusakov
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Si;
- SiGe solid solutions;
- Diffusion;
- Oxygen;
- Dimer;
- Nanowires;
- Ab initio;
10.First-Principles Analysis on Interaction between Dopant (Ga, Sb) and Contamination Metal Atoms in Ge Crystals

机译：掺杂剂（Ga，Sb）与Ge晶体中污染金属原子相互作用分析的第一原理分析
- 作者：T. Yamato;K. Sueoka;T. Maeta
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- First-principles calculation;
- Metal gettering;
- Ge crystal;
- Dopant;
11.Defects Related to Sb-Mediated Ge Quantum Dots

机译：与SB介导的GE量子点相关的缺陷
- 作者：Alexander A. Tonkikh;Victor-Tapio Rangel-Kuoppa;Nikolay D. Zakharov;Wolfgang Jantsch;Peter Werner
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Epitaxy;
- Stranski-Krastanov islands;
- Quantum dots;
- DLTS;
- High resolution electron microscopy;
12.Luminescence from Germanium and Germanium on Silicon

机译：来自锗和锗的发光
- 作者：Tzanimir Arguirov;Martin Kittler;Michael Oehme;Nikolay V. Abrosimov;Oleg F. Vyvenko;Erich Kasper;Joerg Schulze
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Ge;
- Ge on Si;
- LED;
- Luminescence;
- Dislocations;
13.Characterization of electrical contacts on silicon (100) after ablation and sulfur doping by femtosecond laser pulses

机译：由飞秒激光脉冲掺杂和硫磺掺杂后硅（100）的电触头表征
- 作者：P. Saring;A. L. Baumann;S. Kontermann;W. Schade;M. Seibt
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Black Silicon;
- Femtosecond laser processing;
- Sulfur doping;
- EBIC;
- TEM;
14.PL and DLTS analysis of carbon-related centers in irradiated p-type Cz-Si

机译：辐照P型CZ-Si中碳相关中心的PL和DLTS分析
- 作者：Bahman Raeissia;Naveengoud Ganagona;Augustinas Galeckas;Edouard V. Monakhov;Bengt G. Svensson
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Photoluminescence;
- DLTS;
- P center;
- C center;
15.Electric field effect surface passivation for silicon solar cells

机译：硅太阳能电池的电场效应表面钝化
- 作者：Ruy S. Bonilla;Christian Reichel;Martin Hermle;Peter Wilshaw
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Surface passivation;
- Effective lifetime;
- Field effect;
- Dielectric;
- Electrets;
16.Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals

机译：压力对大直径缺陷Si晶体内在点缺陷行为的影响的理论研究
- 作者：K. Sueoka;E. Kamiyama;J. Vanhellemont
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Thermal stress;
- Point defects;
- Defect-free Si crystal;
- Density functional study;
- Void;
17.Influence of Cu Concentration on the Getter Efficiency of Dislocations and Oxygen Precipitates in Silicon Wafers

机译：Cu浓度对硅晶片脱位和氧气沉淀物的吸气效率的影响
- 作者：D. Kot;G. Kissinger;M. A. Schubert;A. Sattler;T. Muller
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Internal gettering;
- RTA;
- Oxygen precipitates;
- Dislocations;
- STEM;
18.A Comparison of EBIC, LBIC and XBIC Methods as Tools for Multicrystalline Si Characterization

机译：EBIC，LBIC和XBIC方法的比较作为多结晶SI表征的工具
- 作者：V. I. Orlov;O. V. Feklisova;E. B. Yakimov
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- LBIC;
- XBIC;
- EBIC;
- Dislocation;
- Grain boundary;
- Precipitate;
- Si;
19.Dislocation motions in Czochralski silicon wafers treated by rapid thermal processing under different atmospheres

机译：Czochralski硅晶片中的脱位动作通过在不同大气下的快速热处理处理
- 作者：Lingmao Xu;Chao Gao;Xiangyang Ma;Deren Yang
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Rapid thermal processing;
- Dislocation motion;
- Czochralski silicon;
20.Defect control in zinc oxynitride semiconductor for high-performance and high-stability thin-film transistors

机译：用于高性能和高稳定性薄膜晶体管氧氮化物半导体锌中的缺陷控制
- 作者：Hyun-Suk Kim;Joon Seok Park;Tae Sang Kim;Kyoung Seok Son;Jong-Baek Seon;Seok-Jun Seo;Sun-Jae Kim;Sunhee Lee;Eok Su Kim;Myoungkwan Ryu
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- TFT;
- Oxynitride;
- Flat Panel Display;
- First-principles calculation;
21.Queue Time Sensitivity Analysis Methodology

机译：队列时间敏感性分析方法
- 作者：Alex Freilikhman;Rotem Drori;Yakov Shor
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Queue Time;
- Methodology;
- Die yield;
- Process step;
- Algorithm;
- Correlation;
22.Formation of single and double donor states of trivacancy-oxygen complexes in p-type silicon

机译：P型硅中三种氧气复合物的单一和双供体状态的形成
- 作者：N. Ganagona;L. Vines;E. V. Monakhov;B. G. Svensson
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Trivacancy;
- Trivacancy-oxygen;
- Silicon;
- DLTS;
23.Synthesis and Light Absorption Mechanism in Si or Ge Nanoclusters for Photovoltaics Applications

机译：用于光伏应用的Si或Ge纳米能器中的合成和光吸收机理
- 作者：Salvo Mirabella;Salvo Cosentino;Antonio Terrasi
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Nanostructures;
- Quantum confinement effects;
- Optical bandgap;
- Matrix effect;
24.High n-type doping in Ge for optical gain and lasing

机译：GE中的高N型掺杂，用于光学增益和激光
- 作者：Yan Cai;Jurgen Michel
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- N-type doping;
- Diffusion;
- Band gap narrowing;
- Germanium;
- Photoluminescence;
25.On the trade-off between industrially feasible silicon surface preconditioning prior to interface passivation and iron contaminant removal effectiveness

机译：在界面钝化之前工业上可行的硅表面预处理的折衷与铁污染物去除效果
- 作者：A. Laades;U. Sturzebecher;H. P. Sperlich;C. Moller;K. Laer;A. Lawerenz
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Surface passivation;
- Surface preconditioning;
- PECVD;
- Contamination;
- Interstitial iron;
26.Metastable CuV O* complex in silicon

机译：硅中的亚料CUV O *复合物
- 作者：Nikolai Yarykin;Joerg Weber
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Silicon;
- Copper impurity;
- Radiation defects;
- Deep levels;
27.Kinetics of Hydrogen Motion via Dislocation Network in Hydrophilically Direct Bonded Silicon Wafers

机译：通过位于直接粘接硅晶片中的脱位网络氢运动动力学
- 作者：Anton Loshachenko;Oleg Vyvenko;Oleg Kononchuk
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Dislocation network;
- Hydrogen passivation;
- Hydrogen kinetics;
- Silicon direct wafer bonding;
- Wet-chemical etching;
28.Polycrystalline silicon gettering layers with controlled residual stress

机译：具有受控残余应力的多晶硅吸收层
- 作者：D. Lysacek;P. Kostelnik;P. Panek
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Polycrystalline silicon;
- Gettering;
- Multilayer structure;
- Residual stress;
- Chemical vapor Deposition;
29.Calibration of IR absorbance in highly nitrogen doped silicon

机译：高氮掺杂硅中的IR吸光度校准
- 作者：Kevin Lauer;Christian Moeller;Rudolf Porytskyy;Hartmuth Strutzberg;Dirk Schulze;Michael Schley;Friedrich Schaaff
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Nitrogen;
- Silicon;
- FTIR;
- SIMS;
30.Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon

机译：通过退火电子照射硅的脱位相关发光的发光二极管的制造
- 作者：N. A. Sobolev;P. N. Aruev;A. E. Kalyadin;E. I. Shek;V. V. Zabrodskiy;A. S. Loshachenko;K. F. Shtelmakh;V. I. Vdovin;A. Medvids;Luelue Xiang;Deren Yang
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Dislocation-related luminescence;
- Silicon;
- Electron irradiation;
- Annealing;
31.Electrical and Optical Characterisation of Silicon Nanocrystals Embedded in SiC

机译：嵌入SiC中硅纳米晶体的电气和光学特征
- 作者：M. Schnabel;P. Loener;M. Canino;S. A. Dyakov;M. Allegrezza;M. Bellettato;J. Lopez-Vidrier;S. Hernandez;C. Summonte;B. Garrido;P. R. Wilshaw;S. Janz
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Silicon nanocrystals;
- Silicon carbide;
- Photoluminescence;
- Recombination;
- P-i-n junction;
- Solar cell;
32.ZnO Nanoparticle Formation in Si by Co-implantation of Zn~+ and 0~+ lons

机译：通过共注入Zn〜+和0〜+ LONS的SI ZnO纳米粒子形成
- 作者：V. V. Privezentsev;A. A. Shemukhin;D. V. Petrov;A. Yu. Trifonov;V. V. Saraykin;A. V. Lutzau
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Ion implantation;
- Annealing;
- Si;
- ZnO;
- Nanoparticles (NPs);
33.Defect generation and propagation in mc-Si ingots: Influence on the performance of solar cells

机译：MC-Si锭的缺陷生成和传播：对太阳能电池性能的影响
- 作者：Bhushan Sopori;Vishal Mehta;Srinivas Devayajanam;M. Seacrist;G. Shi;J. Chen;A. Deshpande;J. Binns;J. Appel
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Dislocations;
- Defects;
- Solar cell;
- Silicon;
- Network model;
34.Homo- and Hetero structures Formation in Semiconductors by Laser Radiation: First Stage of Quantum Cones Formation

机译：通过激光辐射形成在半导体中的同源和异质结构：量子锥体形成的第一阶段
- 作者：Artur Medvid;Pavels Onufrijevs;Edvins Dauksta;Nikolai A. Sobolev
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Homo-structure;
- Hetero-structure;
- Laser Radiation;
- Quantum Cones;
35.Properties of strong luminescence at 0.93 eV in solar grade silicon

机译：太阳能级硅0.93eV时强发光的特性
- 作者：C. Krause;T. Arguirov;W. Seifert;D. Mankovics;H. M. Krause;M. Kittler
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Luminescence;
- Dislocations;
- Electron beam induced current;
- Cathodoluminescence;
- Silicon;
36.Radiation Damage of Carrier Lifetime and Conductivity in Sn and Pb doped n-Si

机译：Sn和Pb掺杂N-Si的载流子寿命和电导率的辐射损伤
- 作者：M. Krasko;A. Kraitchinskii;A. Kolosiuk;V. Voitovych;Rudenko;V. Povarchuk
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Silicon;
- Isovalent impurities;
- Radiation defects;
- Radiation damage;
37.Light-Induced Boron-Oxygen Recombination Centres in Silicon: Understanding their Formation and Elimination

机译：硅的光诱导的硼 - 氧重组中心：了解它们的形成和消除
- 作者：V. V. Voronkov;R. Falster
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Silicon;
- Boron;
- Oxygen;
- Carrier lifetime;
- Degradation;
38.Monoisotopic ~(28)Si in spin resonance spectroscopy of electrons localized on shallow donors

机译：浅剂局部局部旋转共振光谱中的单同质〜（28）Si
- 作者：A. A. Ezhevskii;S. A. Popkov;A. V. Soukhorukov;D. V. Guseinov;A. A. Konakov;N. V. Abrosimov;H. Riemann
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
39.Characterisation of dislocation-content in multicrystalline-silicon wafers

机译：多晶硅晶圆中脱位含量的表征
- 作者：A. Ghaderi;S. Senkader
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Multicrystalline;
- Silicon;
- Dislocation;
- Etching;
- Photoluminescence;
- Open circuit voltage;
40.Study of Photovoltage Decays in Nanostructured Ge/Si

机译：纳米结构Ge / Si中的光伏衰减研究
- 作者：O. Korotchenkov;A. Nadtochiy;V. Schlosser
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Silicon-germanium;
- Surface photovoltage;
- Decay transients;
41.Association of FeB pairs under illumination

机译：照明下的2月对协会
- 作者：C. Moeler;A. Laades;K. Lauer
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Iron-boron pair;
- Illumination;
- Lifetime measurement;
42.Overview and Latest Developments in Photoconductance Lifetime Measurements in Silicon

机译：硅光电导寿命测量的概述和最新动态
- 作者：R. A. Sinton;A. L. Blum;J. S. Swirhun
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Lifetime;
- QSSPC;
- Mobility;
43.Photoluminescence Imaging of Silicon Bricks

机译：硅砖的光致发光成像
- 作者：Bernhard Mitchell;Jurgen W. Weber;Mattias Juhl;Daniel Macdonald;Thorsten Trupke
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Photoluminescence;
- Imaging;
- Lifetime;
- Doping;
- Iron;
- Silicon bricks;
- Silicon ingot;
44.Precipitation of interstitial iron in multicrystalline silicon

机译：多晶硅硅中间隙铁的降水
- 作者：An Yao Liu;Daniel Macdonald
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Iron;
- Multicrystalline silicon;
- Precipitation;
- Supersaturation;
- Spatial distribution;
45.Deep Energy Levels of Platinum-Hydrogen Complexes in Silicon

机译：硅中铂 - 氢气复合物的深层能量水平
- 作者：Elie Badr;Peter Pichler;Gerhard Schmidt
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- DLTS;
- Platinum;
- Hydrogen;
- Silicon;
46.Analysis of inhomogeneous dislocation distribution in multicrystalline Si

机译：多结晶Si中不均匀位错分布分析
- 作者：J. Chen;R. R. Prakash;J. Y. Li;K. Jiptner;Y. Miyamura;H. Harada;A. Ogura;T. Sekiguchi
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Mc-Si;
- Dislocation;
- Grain boundary;
47.Impact of Electric Field on Thermoemission of Carriers from Shallow Dislocation-Related Electronic States

机译：电场电场对浅脱位相关电子国家载体热处理的影响
- 作者：M. Trushin;O. Vyvenko
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Dislocation networks;
- Poole-Frenkel effect;
- Electronic states of dislocations;
- DLTS;
48.Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and Their Effect on Power JBS SiC Diode Characteristics

机译：4H-SIC脱落器中的点缺陷引入4.5MeV电子照射及其对功率JBS SIC二极管特性的影响
- 作者：Pavel Hazdra;Vit Zahlava;Jan Vobecky
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Silicon carbide;
- Radiation defects;
- Electron irradiation;
- Power diode;
49.Reduction of Structural Defects in Ge Epitaxially Grown on Nano-structured Si Islands on SOI Substrate

机译：在SOI底物上纳米结构Si岛上外延生长的GE外延生长的结构缺陷
- 作者：P. Zaumseil;Y. Yamamoto;M. A. Schubert;T. Schroeder;B. Tillack
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Ge;
- Heteroepitaxy;
- Nano-structured Si;
- SOI;
- XRD;
- TEM;
50.Electronic states and optical gap of phosphorus-doped silicon nanocrystals embedded in a silica host matrix

机译：嵌入二氧化硅宿主基质中的磷掺杂硅纳米晶体的电子状态和光学间隙
- 作者：Anton A. Konakov;Vladimir A. Belyakov;Vladimir A. Burdov
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Silicon nanocrystals;
- Electronic structure;
- Optical gap;
- Phosphorus doping;
- Valley-orbit interaction;
- Envelope-function approximation;
51.Efficiency-Limiting Recombination in Multicrystalline Silicon Solar Cells

机译：多晶硅太阳能电池中的效率限制重组
- 作者：Martin C. Schubert;Jonas Schoen;Alireza Abdollahinia;Bernhard Michl;Wolfram Kwapil;Florian Schindler;Friedemann Heinz;Milan Padilla;Johannes A. Giesecke;Matthias Breitwieser;Stephan Riepe;Wilhelm Warta
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Silicon;
- Crucible;
- Iron;
- Chromium;
- QSSPL;
- ELBA;
- LBIC;
- μPL;
52.The impact of dislocation structure on impurity decoration of dislocation clusters in multicrystalline silicon

机译：脱位结构对多晶硅杂质簇杂质装饰的影响
- 作者：M. Kivambe;G. Stokkan;T. Ervik;S. Castellanos;J. Hofstetter;T. Buonassisi
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Dislocations;
- Multicrystalline silicon;
- Recombination activity;
- Impurity decoration;
53.Iron management in multicrystalline silicon through predictive simulation: point defects, precipitates, and structural defect interactions

机译：通过预测仿真：点缺陷，沉淀和结构缺陷相互作用，在多晶硅硅中的铁管理
- 作者：Jasmin Hofstetter;David P. Fenning;Douglas M. Powell;Ashley E. Morishige;Tonio Buonassisi
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Silicon solar cells;
- Gettering;
- Interstitial iron;
- Precipitated iron;
54.Infrared defect dynamics of irradiation induced complexes in CZ silicon - C-rich case

机译：CZ硅 - C-C形壳体辐照诱导复合物的红外缺陷动态
- 作者：N. Inoue;Y. Goto;T. Sugiyama;H. Seki;K. Watanabe;Y. Kawamura
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Silicon;
- Infrared;
- Irradiation;
- Impurity;
- Point defects;
55.Dedicated to the memory of Prof. M. Sheinkman Effect of ultrasonic treatment on the defect structure of the Si-SiO_2 system

机译：致力于记忆超声波处理对Si-SiO_2系统缺陷结构的M. Sheinkman效果的记忆
- 作者：D. Kropman;S. Dolgov;P. Onufrijevs;E. Dauksta
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Si-SiO_2 interface;
- Ultrasonic treatment;
- Defect structure;
- ESR;
56.Proximity Gettering of Slow Diffuser Contaminants

机译：靠近慢漫射器污染物的宿主
- 作者：M. L. Polignano;I. Mica;E. Cazzini;M. Ceresoli;D. Codegoni;F. Russo;G. Moccia;G. Nardone;R. Alfonsetti;G. Polsinelli
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Contamination;
- Gettering;
- Molybdenum;
- Tungsten;
- DLTS;
57.Anisotropy of the Porous Layer Formation Rate in Silicon with Various Acceptor Concentrations

机译：具有各种受体浓度的硅中多孔层形成速率的各向异性
- 作者：E. V. Astrovaa;Yu. A. Zharova
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Porous silicon;
- Anisotropy;
- Etching rate;
58.10 cm diameter mono cast Si growth and its characterization

机译：10厘米直径单声道铸造Si生长及其表征
- 作者：Y. Miyamura;H. Harada;K. Jiptner;J. Chen;R. R. Prakash;J. Y. Li;T. Sekiguchi;T. Kojima;Y. Ohshita;A. Ogura
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Mono silicon;
- Seed cast growth;
- Crystallization;
- Precipitation;
- Dislocations;
59.Charge carrier transport along grain boundaries in silicon

机译：沿硅的晶界承载载波运输
- 作者：Martin Kittler;Manfred Reiche;Hans-Michael Krause
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Grain boundary;
- Dislocation network;
- Wafer bonding;
- Si;
- SOI;
- MOS-FET;
- Charge carrier transport;
- Carrier mobility;
- Shallow dislocation bands;
- Coulomb blockades;
- D-band luminescence;
60.Isotope-dependent phonon trapping at defects in semiconductors

机译：同位素依赖性声子捕获半导体中的缺陷
- 作者：Stefan K. Estreicher;T. Michael Gibbons;Michael Stavola
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Phonon trapping;
- Isotope effects;
- Silicon;
61.Photoluminescence and Raman scattering behavior of Si rich silicon oxynitride films annealed at different temperatures

机译：不同温度退火的Si富硅氧氮膜的光致发光和拉曼散射行为
- 作者：V. Naseka;Lu. Nasieka;M. Voitovych;A. Sarikov;I. Lisovskyy;V. Strelchuk
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Si rich silicon oxynitride films;
- Phase separation;
- Si nanoinclusions;
- Raman scattering;
- Photoluminescence;
62.Silicon and oxygen in high-Al-content AlGaN: incorporation kinetics and electron paramagnetic resonance study

机译：高铝含量AlGaN中的硅和氧气：掺入动力学和电子顺磁共振研究
- 作者：A. Kakanakova-Georgieva;D. Nilsson;X. T. Trinh;N. T. Son;E. Janzen
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- AlGaN;
- MOCVD;
- Si doping;
- Electron paramagnetic resonance;
63.The trivacancy and trivacancy-oxygen family of defects in silicon

机译：硅中的琐碎和琐碎 - 氧气缺陷
- 作者：V. P. Markevich;A. R. Peaker;B. Hamilton;S. B. Lastovskii;L. I. Murin;J. Coutinho;M. J. Rayson;P. R. Briddon;B. G. Svensson
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Silicon;
- Trivacancy;
- Trivacancy-oxygen;
- Energy levels;
- Ab-initio modeling;
64.Vacancy-related defects in Ge doped with tin

机译：GE掺杂有锡的空缺相关的缺陷
- 作者：L. I. Khirunenko;Yu. V. Pomozov;M. G. Sosnin;N. V. Abrosimov;H. Riemann
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Germanium;
- Tin;
- Gallium;
- Irradiation;
- Divacancy;
65.New results on the electrical activity of 3d-transition metal impurities in silicon

机译：硅3D过渡金属杂质电气活动的新结果
- 作者：Jorg Weber;Leopold Scheffler;Vladimir Kolkovski;Nikolai Yarykin
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Transition metal impurities;
- Hydrogen;
- Cobalt;
- Titanium;
- Copper;
- Silicon;
- DLTS;
66.Fast and Slow Vacancies in Silicon

机译：硅的快速和缓慢的职位空缺
- 作者：V. V. Voronkov;R. Falster
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Vacancy;
- Self-interstitial;
- Silicon;
- Diffusion;
67.Multiple proton implantations into silicon: A combined EBIC and SRP Study

机译：多个质子植入到硅中：EBIC和SRP研究组合
- 作者：S. Kirnstoetter;M. Faccinelli;M. Jelinek;W. Schustereder;J. G. Laven;H. J. Schulze;P. Hadley
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
68.Investigation of point defects modification in silicon dioxide by cathodoluminescence

机译：阴离子发光硅二氧化硅点缺陷改性的研究
- 作者：E. V. Ivanova;M. V. Zamoryanskaya
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Silicon dioxide;
- Point defect;
- Cathodoluminescence;
69.Properties of point defects in silicon: new results after a long-time Debate

机译：硅中点缺陷的性质：长期辩论后的新结果
- 作者：H. Bracht;R. Kube;E. Hueger;H. Schmidt
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Self-diffusion;
- Silicon;
- Germanium;
- Vacancy;
- Self-interstitial;
70.Light-Element Impurities and their Reactions in Multicrystalline Si

机译：轻质杂质及其在多结晶Si中的反应
- 作者：Michael Stavola;Stefan K. Estreicher;Mike Seacrist
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Multicrystalline Si;
- Light element impurities;
- IR spectroscopy;
71.Influences of charged dislocations on performance of III-V compound semiconductor FinFETs

机译：带电脱位对III-V复合半导体FINFET性能的影响
- 作者：Ji-Hyun Hur;Myoung-Jae Lee;Seong-Ho Cho;Youngsoo Park
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- III-V semiconductors;
- MOSFET;
- FinFET;
- Dislocation;
- Scattering;
72.External and internal gettering of interstitial iron in silicon for solar cells

机译：用于太阳能电池硅中间隙的外部和内部气体
- 作者：Daniel Macdonald;An Yao Liu;Sieu Pheng Phang
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Silicon;
- Iron;
- Gettering;
- Precipitation;
- Solar cells;
73.Effect of hydrogen for preservation of reconstructed surfaces

机译：氢气对重建表面保护的影响
- 作者：Koji Araki;Ryuji Takeda;Koji lzunome;Xinwei Zhao
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Silicon surface roughness;
- Hydroen termination;
- High-temperature annealing;
74.Smoothening by self-diffusion of silicon during annealing in a rapid processing chamber

机译：在快速加工室退火过程中通过硅的自扩散平滑
- 作者：P. Acosta-Alba;C. Gourdel;O. Kononchuk
- 会议名称：《Internationalonference on Gettering and Defect Engineering in Semiconductor Technology》 | 2014年
- Self-diffusion;
- Thermal Smoothening;
- Power Spectral Density;
- Roughness;