AN APPARATUS OF MANUFACTURING SILICON SINGLE CRYSTAL INGOT, A METHOD OF MANUFACTURING USING THE APPARATUS, SILICON SINGLE CRYSTAL INGOTS AND SILICON WAFERS USING THE APPARATUS

摘要

The present invention relates to an apparatus for growing a silicon single crystal ingot according to the Czochralski method, and its object is provide an apparatus for manufacturing a single crystal ingot to improve the ingot growth and at the same time achieve the in-plane uniformity of quality of the silicon wafer to. Chamber in the present invention for this purpose; It is provided on the interior of the chamber, a crucible containing a silicon me A heater for heating the crucible; So as to surround the silicon single crystal ingot is provided between the silicon single crystal ingot and the crucible, the heat shield to block the heat emitted from the silicon melt and the ingot; And the column is attached to the most adjacent portion of the silicon single crystal ingot in the shield, there is provided a device for manufacturing a silicon single crystal ingot which includes a train of cylindrical portions surrounding the silicon single crystal ingot.