首页> 外国专利> THIN FILM FORMATION METHOD, THIN FILM FORMATION EQUIPMENT, METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENCE DEVICE, ORGANIC ELECTROLUMINESCENCE DEVICE, AND ELECTRONIC APPARATUS

THIN FILM FORMATION METHOD, THIN FILM FORMATION EQUIPMENT, METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENCE DEVICE, ORGANIC ELECTROLUMINESCENCE DEVICE, AND ELECTRONIC APPARATUS

机译:薄膜形成方法,薄膜形成设备,制造有机电致发光器件的方法,有机电致发光器件和电子设备

摘要

The invention relates to providing a thin film formation method which can carry out various kinds of patterning deposition such as a mask vapor deposition with high precision and correctly, and a thin film formation equipment, and furthermore, to provide a method of manufacturing an organic electroluminescence device using the thin film formation method, an organic electroluminescence device, and an electronic apparatus having the organic electroluminescence device. A thin film formation method that arranges a mask M between a substrate G and a material source 1 and forms the material of the material source 1 as thin film in the substrate G, comprises: a substrate contacting process to contact the mask M and the substrate G; a gap measurement process to measure a gap between the mask M and the substrate G; and a thin film formation process to form the thin film according to the measurement result in the gap measurement process. IMAGE
机译:本发明涉及提供可以高精度且正确地进行诸如掩模气相沉积的各种图案沉积的薄膜形成方法,以及薄膜形成设备,此外,提供一种制造有机电致发光的方法。使用薄膜形成方法的半导体装置,有机电致发光装置以及具有该有机电致发光装置的电子设备。一种在基板G和材料源1之间布置掩模M并在基板G中形成薄膜的形式形成材料源1的材料的薄膜形成方法,包括:基板接触工艺,以使掩模M和基板接触G;间隙测量过程,用于测量掩模M和基板G之间的间隙;薄膜形成工艺,以根据间隙测量工艺中的测量结果形成薄膜。 <图像>

著录项

  • 公开/公告号KR20050067084A

    专利类型

  • 公开/公告日2005-06-30

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORPORATION;

    申请/专利号KR20040112278

  • 发明设计人 YOTSUYA SHINICHI;

    申请日2004-12-24

  • 分类号H05B33/10;

  • 国家 KR

  • 入库时间 2022-08-21 22:04:58

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