The ion implantation apparatus having a method and a shadow jig to do this for monitoring an apparatus for implanting ions in a semiconductor substrate is disclosed. During the primary ion implantation process shadow jig to cut off a portion of the ion beam to be supplied to the semiconductor substrate to form a first shadow on a semiconductor substrate. After rotating the semiconductor substrate based a set rotation angle, during the second ion implantation process shadow jig to cut off a portion of the ion beam to form a second shadow jig on a semiconductor substrate. First measuring the thermal wave value of the shadow area, it is possible to easily determine whether or not the rotation of the column based on the measured thermal wave value and the comparison value of the wave by the semiconductor substrate.
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