首页> 外国专利> SEMICONDUCTOR MEMORY DEVICE HAVING REDUNDANCY DECODER AND A METHOD OF REDUNDANCY TECHNIQUE FOR THE SEMICONDUCTOR MEMORY DEVICE USING REDUNDANCY DECODER

SEMICONDUCTOR MEMORY DEVICE HAVING REDUNDANCY DECODER AND A METHOD OF REDUNDANCY TECHNIQUE FOR THE SEMICONDUCTOR MEMORY DEVICE USING REDUNDANCY DECODER

机译:具有冗余解码器的半导体存储器装置以及使用冗余解码器的半导体存储器装置冗余技术的方法

摘要

PURPOSE: A semiconductor memory device is provided which has a redundancy decoder of high efficiency, and a method is provided to remedy a failed cell of a semiconductor memory device using the redundancy decoder. CONSTITUTION: N memory blocks(BLK0-BLKn-1) comprise I columns and J rows for memory cells to form a matrix. N redundancy blocks(R_BLK0-R_BLKn-1) comprises M redundancy rows respectively and correspond each memory block. A block decoder receives x bit column addresses and selects a specific memory block among the memory blocks. A row decoder receives y bit row addresses and selects specific rows. And L redundancy row decoders receive a row address and a column address and select specific redundancy rows. A relation of L,M,N is M L = M*N.
机译:目的:提供一种具有高效率的冗余解码器的半导体存储装置,并且提供一种使用冗余解码器来补救半导体存储装置的故障单元的方法。组成:N个存储块(BLK0-BLKn-1)包含I列和J行,用于存储单元形成矩阵。 N个冗余块(R_BLK0-R_BLKn-1)分别包括M个冗余行,并且对应于每个存储块。块解码器接收x位列地址,并在存储块中选择特定的存储块。行解码器接收y位行地址并选择特定行。 L个冗余行解码器接收行地址和列地址,并选择特定的冗余行。 L,M,N的关系是M <L <= M * N。

著录项

  • 公开/公告号KR100487529B1

    专利类型

  • 公开/公告日2005-05-03

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20020040716

  • 发明设计人 민병준;김기남;전병길;최문규;

    申请日2002-07-12

  • 分类号G11C29/00;

  • 国家 KR

  • 入库时间 2022-08-21 22:03:51

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