Semiconductor memory device including both data redundancy memory cell array and local redundancy memory cell array and redundancy method thereof

摘要

having all of the data redundancy memory cell array and the redundancy memory cell array in the local semiconductor memory device and the semiconductor memory The redundancy method of the device is disclosed. The semiconductor memory device according to the invention a plurality of normal memory blocks and a redundancy memory block at least one data line and a redundancy control. A plurality of normal memory blocks and a redundancy memory cell array, each local to replace defects generated in a normal memory cell array and the normal memory cell array in the column unit. At least one or more data lines each having a redundancy memory block is data redundancy memory cell array for replacing a plurality of the normal defect occurred in the normal memory cell array of memory cells in a column block unit. One of the redundancy control unit in the event of a defect in at least two or more columns that are included in the normal memory cell arrays, a part of the column is replaced with the column data line and the other part of the redundancy memory cell array in the column is the local redundancy memory cell array The alternative to the column.