A method of controlling processing condition of SBT ferroelectric thin films

摘要

PURPOSE: A method for fabricating ferroelectric layer using SBT is provided to restrict generation of deterioration by transforming a fluorite phase to an Aurivillius phase within a short period of time under the low temperature. CONSTITUTION: A slurry including SBT seed is uniformly coated on a semiconductor substrate(200). An amorphous STB layer is formed by performing repeatedly a process for coating a drying an SBT sol solution on the semiconductor substrate. The amorphous STB layer is crystallizes as a Fluorite phase by performing a thermal process for the semiconductor substrate under the predetermined temperature during the predetermined period. A phase transformation process of the fluorite phase to an Aurivillius phase(600) is generated by performing the thermal process for the semiconductor substrate.