METHOD OF FORMING SBT FERROELECTRIC THIN FILM

摘要

PROBLEM TO BE SOLVED: To form an SBT (Sr_rBi_sTa₂O_t) thin film of a desired composition by controlling the shortage of Bi atoms in a state where diffusion of Bi atoms is suppressed.;SOLUTION: On a substrate 101, there is created a state where an Sr_pTa₂O_q layer 102 is formed consisting of strontium (Sr), tantalum (Ta) and oxygen. Subsequently, on the Sr_pTa₂O_q layer 102, there is created a state where an Sr_xBi_yTa₂O_z layer 103 consisting of Sr, bismuth (Bi), Ta, and oxygen is formed on the Sr_pTa₂O_q layer 102. Then, in an oxygen environment made into almost an atmospheric pressure, it is heated at 700°C and this state is held for 1 hour. On the substrate 101, there is created a state where a crystallized Sr_rBi_sTa₂O_t film 104 consisting of Sr, Bi, Ta, and oxygen is formed by diffusing Bi of the Sr_xBi_yTa₂O_z layer 103 to the Sr_pTa₂O_q layer 102.;COPYRIGHT: (C)2007,JPO&INPIT