NONVOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING CONSTANT BIT LINE PRECHARGE LEVEL

摘要

The present invention relates to a nonvolatile semiconductor memory device to compensate for changes in the precharge level of the bit line as a function of temperature.; The nonvolatile semiconductor memory device according to the present invention, the plurality of word lines and is connected to a plurality of bit lines electrically to the bit line voltage supply to program the memory cell array, and supplying the bit line voltage to the bit line and a circuit, and a shut-off control circuit which controls the memory cell array and the shut-off circuit and the shut-off circuit for the bit line is connected between the voltage supply circuit connects these electrically isolated to.; According to the present invention, to compensate for changes in the precharge level of the bit line due to changes in temperature can reduce the detection error during the read operation.