NONVOLATILE SEMICONDUCTOR MEMORY DEVICE MAINTAINING CONSTANT BIT LINE PRECHARGE LEVEL

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device for compensating for the change of a bit line precharge level caused by a temperature change.;SOLUTION: This device includes an electrically programmable memory cell array connected to a plurality of word lines and a plurality of bit lines, a bit line voltage supplying circuit for supplying a bit line voltage to the bit lines, a shut-off circuit connected between the memory cell array and the bit line voltage supplying circuit for electrically insulating or connecting these, and a shut-off control circuit for controlling the shut-off circuit. The shut-off control circuit is constructed to compensate for the change of the precharge level of the bit lines caused by a temperature change.;COPYRIGHT: (C)2005,JPO&NCIPI