POLYSILICON BACK-GATED SOI MOSFET FOR DYNAMIC THRESHOLD VOLTAGE CONTROL

摘要

Insulator-on-silicon (SOI) method of forming a metal oxide semiconductor field effect transistor (MOSFET) device is provided. And a gate-SOI MOSFET device is a polysilicon-polysilicon rear end for controlling the threshold voltage of the gate-containing shear. The rear end in the SOI MOSFET devices - gate acts as a dynamic threshold voltage control system, This is because suitable for use during circuit / system active periods, and the circuit / system idle periods.