A method and apparatus for photoelectrochemical etching of a half conductor sample, in particular made of gallium nitride

摘要

A method for photoelectrochemical etching of a half conductor sample (12), preferably made of gallium nitride,• in the case of which the half conductor sample (12) is brought into contact with an electrolyte - liquid (6),• in the case of the contact surface (14) of the half conductor sample (12) by which means the electrolyte - liquid (6) with uv - light (18) is irradiated,• and in which the in the case of the uv - light - irradiation at the contact surface (14) resulting photocurrent (i) is measured,characterized by the,• that the contact surface (14) during the etching process on the said half conductor sample (12) is repeated a beam (25) of fresh electrolyte - liquid (6) is exposed to, and in that the contact surface (14) is repeated for a predetermined time (t1) with the uv - light (18) is irradiated, wherein in each case in a waiting time (t) between two uv - light - irradiations, the delivery of the electrolyte - liquid - beam (25) is carried out.