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A process for the preparation of a temperature controller of a more layer contact coating, in particular a temperature controller, which can be more layer contact metallization

机译:一种用于制备多层接触涂层的温度控制器,特别是温度控制器的方法,其可以是多层接触金属化

摘要

A process for the preparation of a temperature controller, which can be more layer contact coating (4) on a semiconductor material (2), comprising the steps of:(a) applying a mask layer (3) to the semiconductor material (2);(b) forming a window (31) in the mask layer (3), wherein the the window (31) limiting surfaces of the mask layer (3) an acute angle with the surface to be coated of the semiconductor material (2), in such a way that the window (31) for the semiconductor material on its side facing towards (2) has a larger cross-section than the semiconductor material on its side facing away from (2);(c) applying a contact metal layer (4) to the semiconductor material (2) in the window (31);(d) application of a terminal layer (6) and / or a barrier layer (5) on or over the contact metal layer (4);(e) lifting of the on the mask layer (3) of the contact metal layer (4) and terminal layer (6) by means of removal of the mask layer (3);characterized in thatin method step (c) the application of the contact metal layer (4) by means of a directed deposition process is carried out; and..
机译:一种制备温度控制器的方法,该方法可以是半导体材料(2)上的多层接触涂层(4),包括以下步骤:(a)将掩模层(3)施加到半导体材料(2)上(b)在掩模层(3)中形成窗口(31),其中窗口(31)将掩模层(3)的表面限制为与半导体材料(2)的待涂覆表面成锐角。 ,使得半导体材料的面向(2)一侧的窗口(31)的横截面大于其背向(2)的一侧半导体材料的窗口;(c)施加接触金属层(4)在窗口(31)中的半导体材料(2)上;(d)在接触金属层(4)上方或上方施加端子层(6)和/或势垒层(5);( e)通过去除掩模层(3)在接触金属层(4)和端子层(6)的掩模层(3)上抬起;在方法步骤(c)中的特征在于通过定向沉积工艺在接触金属层(4)上进行;和..

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