Comparison of the growth mode of intimate In contacts deposited at room and cryogenic temperatures on (100) InGaAs and InAlAs self-decomposed layers

摘要

In this work we present the characterisation of the growth mode of a metallic layer from high purity In metal evaporated on top of (3x1) reconstructed In_0.52Al_0.48As and In_0.53Ga_0.47As layers grown by Molecular Beam Epitaxy on InP(100) substrates.these ternary compounds exhibit both vertical and lateral decomposition,the latter inducing a significant surface roughness prior to metallisation.The formation of a homogenous In layer,the nucleation of In islands and the appearance of mixed InAs-In pure islands depending on the state of the ternary buffer is discussed based upon TEM,HREM,AFM,and XPS measurements.