首页> 外国专利> MANUFACTURING PROCESS OF RESIST POLYMER, RESIST POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS

MANUFACTURING PROCESS OF RESIST POLYMER, RESIST POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS

机译:阻性聚合物,阻性聚合物,阻性组成和图案化工艺的制造过程

摘要

PROBLEM TO BE SOLVED: To provide a resist polymer which has high sensitivity and resolution and causes only a small number of defects and a small degree of line edge roughness upon development, when used for a resist composition in DUV excimer laser lithography or electron beam lithography, its manufacturing process, a resist composition containing the resist polymer and a patterning process using the resist composition.;SOLUTION: The manufacturing process of the resist polymer relates to the manufacture of a resist polymer containing (A) a constitutional unit at least having an acid-leaving group and involves a step to polymerize the monomer constituting the constitutional unit (A) using a polymerization initiator and a specific compound in which n pieces of the functional group [X-SH] having an acid-decomposing bond and polymerization-termination capability or chain-transfer capability are bonded in the place of J representing an n valent hydrocarbon group optionally having a substituent and/or a heteroatom.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:当将其用于DUV受激准分子激光光刻或电子束光刻中的抗蚀剂组合物时,提供一种抗蚀剂聚合物,其具有高灵敏度和分辨率,并且在显影时仅引起少量缺陷和较小程度的线边缘粗糙度。 ,其制造工艺,包含抗蚀剂聚合物的抗蚀剂组合物和使用该抗蚀剂组合物的图案化工艺。;解决方案:抗蚀剂聚合物的制造工艺涉及包含(A)至少具有结构单元的结构单元的抗蚀剂聚合物的制造。酸离去基团,涉及使用聚合引发剂和特定的化合物使构成结构单元(A)的单体聚合的步骤,其中n个官能团[X-SH]具有酸分解键并聚合终止能力或链转移能力被取代在表示代表任选具有取代基的n价烃基的J的位置上分子和/或杂原子。;版权:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2006241233A

    专利类型

  • 公开/公告日2006-09-14

    原文格式PDF

  • 申请/专利权人 MITSUBISHI RAYON CO LTD;

    申请/专利号JP20050056078

  • 发明设计人 UEDA TERUSHI;MOMOSE AKIRA;

    申请日2005-03-01

  • 分类号C08F2/38;G03F7/039;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-21 21:57:06

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号