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193 nm Resist Line Collapse Study by Modifying the Resist Polymer and Process Conditions with Utilizing FIRM Process

机译：193 NM抗蚀线折叠研究通过利用坚固的工艺来改变抗蚀剂聚合物和工艺条件

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Keiichi Tanaka; Yoshiaki Yamada; Seiya Masuda; Masakazu Kobayashi; Woo-Kyu Kim; Clement Anyadiegwu; Murirathna Padamanaban; Ralph R. Dammel;
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年度 2004
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1. 193 nm Resist Line Collapse Study by Modifying the Resist Polymer and Process Conditions with Utilizing FIRM Process [J] . Keiichi Tanaka, Yoshiaki Yamada, Seiya Masuda Journal of Photopolymer Science and Technology . 2004,第4期

机译：通过利用FIRM工艺修改抗蚀剂聚合物和工艺条件来进行193 nm抗蚀剂塌陷研究
2. Progress in 193nm Resists: Impact of the Development Process on Anhydride-Containing Resist Materials [J] . Robert DE.Allen, Carl E.Larson, Hoa D.Truong, Journal of Photopolymer Science and Technology . 2000,第4期

机译：193nm抗蚀剂的进展：开发工艺对含酐抗蚀剂材料的影响
3. Progress in 193nm Resists: Impact of the Development Process on Anhydride-Containing Resist Materials [J] . Robert DE.Allen, Carl E.Larson, Hoa D.Truong, Journal of Photopolymer Science and Technology . 2000,第4期

机译：193nm抗蚀剂的进展：开发工艺对含酐抗蚀剂材料的影响
4. Effect of the rinse solution to avoid 193 nm resist line collapse: A study for modification of resist polymer and process conditions [C] . Seiya Masuda, Masakazu Kobayashi, Woo-Kyu Kim, Conference on Advances in Resist Technology and Processing XXI pt.2; 20040223-20040224; Santa Clara,CA; US . 2004

机译：冲洗溶液避免193 nm抗蚀剂线崩塌的效果：关于抗蚀剂聚合物改性和工艺条件的研究
5. Exploration of non-chemically amplified resists based on dissolution inhibitors for 193 nm lithography. [D] . Baylav, Burak. 2010

机译：探索基于溶出抑制剂的非化学放大抗蚀剂，用于193 nm光刻。
6. Use of Two-Photon Lithography with a Negative Resist and Processing to Realise Cylindrical Magnetic Nanowires [O] . Joseph Askey, Matthew Oliver Hunt, Wolfgang Langbein, 2020

机译：负电阻双光子光刻技术的使用和加工以实现圆柱磁性纳米线
7. Effect of Molecular Weights of 193nm Resist Polymers on the Negative Tone Development Process [O] . Young C. Bae, Seung-Hyun Lee, Rosemary Bell, 2011

机译：193nm抗蚀剂聚合物分子量对阴性发育过程的影响
8. Advances in Resist Technology and Processing XII. Optimization of a 193-nmSilylation Process for Sub 0.25 micrometers Lithography [R] . Palmateer, S. C., Kunz, R. R., Horn, M. W., 1995

机译：抗蚀技术与加工XII的进展。亚0.25微米光刻的193纳米硅烷化工艺的优化

193 nm Resist Line Collapse Study by Modifying the Resist Polymer and Process Conditions with Utilizing FIRM Process

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